Eur. Phys. J. Appl. Phys. 35, 155-158 (2006)
https://doi.org/10.1051/epjap:2006091

Effect of SHI irradiation on Se-Te-Sn thin films

Department of Physics, Jamia Millia Islamia, New Delhi-110025, India

Corresponding author: mzulfe@rediffmail.com

Received: 13 February 2006
Revised: 17 May 2006
Accepted: 24 May 2006
Published online: 23 August 2006

Abstract

We have study the effect of Tin impurity and Swift heavy ion irradiation on the optical properties of the chalcogenide thin films. Thin films are prepared by thermal evaporation technique and irradiated by swift heavy ion beam of 60 MeV Si⁵⁺ ion with influence of 5 × 10¹² ions/cm². The SHI induced structural and optical changes in the thin films due to which optical band gap decrease. Reduction of the optical band gap is may be due to increase the defect states near to the band tails in the band gap on irradiation.