2011 Impact factor 0.771
EPJ AP - Applied Physics
Applied Physics
  • AlGaN/GaN/InGaN/GaN DH-HEMTs with GaN channel layer grown at high temperature
    Lu Zhang, Xiaoliang Wang, Hongling Xiao, Hong Chen, Chun Feng, Guangdi Shen, Zhanguo Wang, Xun Hou
    Eur. Phys. J. Appl. Phys., 62 2 (2013) 20105
    Published online: 2013-05-22 , DOI: 10.1051/epjap/2013120390
    Abstract | PDF (709.3 KB)
  • Calorimetric study of thermal crystallization kinetics in Se78-xTe20Sn2Pbx (0 ≤ x ≤ 6) alloys
    H. Kumar, N. Mehta
    Eur. Phys. J. Appl. Phys., 62 2 (2013) 20106
    Published online: 2013-05-22 , DOI: 10.1051/epjap/2013120463
    Abstract | PDF (443.0 KB)
  • Study of structural and electrical properties of zinc oxide and Al-doped zinc oxide thin films deposited by DC sputtering
    Amira Barhoumi, Liu Yang, Nawfel Sakly, Habib Boughzala, Gérard Leroy, Joël Gest, Jean-Claude Carru, Samir Guermazi
    Eur. Phys. J. Appl. Phys., 62 2 (2013) 20302
    Published online: 2013-05-22 , DOI: 10.1051/epjap/2013120535
    Abstract | PDF (407.7 KB)
  • Fabrication and temperature-dependent band gap shrinkage of α-phase Bi2O3 thin films grown by atomic layer deposition method
    Yude Shen, Yawei Li, Kai Jiang, Jinzhong Zhang, Zhihua Duan, Zhigao Hu, Junhao Chu
    Eur. Phys. J. Appl. Phys., 62 2 (2013) 20303
    Published online: 2013-05-22 , DOI: 10.1051/epjap/2012130133
    Abstract | PDF (653.4 KB)
  • The estimation of size and position of contaminating particle adhering to the insulating spacer surface in gas-insulated systems
    Yasin Khan, Firmansiah Nur Budiman, Abderrahmane Béroual, Nazar Hussain Malik, Abdulrehman Ali Al-Arainy
    Eur. Phys. J. Appl. Phys., 62 2 (2013) 20801
    Published online: 2013-05-22 , DOI: 10.1051/epjap/2013130007
    Abstract | PDF (858.3 KB)
  • Organic field-effect transistors with a sandwich structure from inserting 2,2′,2″-(1,3,5-benzenetriyl)tris[1-phenyl-1H-benzimidazole] in the pentacene active layer
    Xinge Yu, Junsheng Yu, Jianlin Zhou, Wei Huang, Hui Lin
    Eur. Phys. J. Appl. Phys., 62 2 (2013) 20101
    Published online: 2013-04-30 , DOI: 10.1051/epjap/2013120263
    Abstract | PDF (643.2 KB)
  • Selective plasma etching treatment of the screen-printed carbon nanotube cold cathode
    Jun Yu
    Eur. Phys. J. Appl. Phys., 62 2 (2013) 20102
    Published online: 2013-04-30 , DOI: 10.1051/epjap/2013120298
    Abstract | PDF (935.5 KB)
  • Phase transition and elastic properties of beryllium sulfide semiconductor under high pressure
    Feng Wang, Chenghua Hu, Jinghe Wu, Ping Zhou, Zhou Zheng, Chunlian Hu
    Eur. Phys. J. Appl. Phys., 62 2 (2013) 20103
    Published online: 2013-04-30 , DOI: 10.1051/epjap/2013130027
    Abstract | PDF (1.703 MB)
  • Reverse leakage mechanisms of liquid metal contacts onto II–VI group semiconductor (Ga/p-WSe2)
    Achamma Bobby, Partha Sarathi Gupta, Bobby Kachappilly Antony
    Eur. Phys. J. Appl. Phys., 62 2 (2013) 20104
    Published online: 2013-04-30 , DOI: 10.1051/epjap/2013130018
    Abstract | PDF (507.5 KB)
  • Determination of the conduction mechanism and extraction of diode parameters of Au/PANI-TiO2/Al Schottky diode
    Hojjat Amrollahi Bioki
    Eur. Phys. J. Appl. Phys., 62 2 (2013) 20201
    Published online: 2013-04-30 , DOI: 10.1051/epjap/2013120545
    Abstract | PDF (463.7 KB)
Editor-in-Chief
B. Drévillon
ISSN (Print Edition): 1286-0042
ISSN (Electronic Edition): 1286-0050

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