-
AlGaN/GaN/InGaN/GaN DH-HEMTs with GaN channel layer grown at high temperature
Lu Zhang, Xiaoliang Wang, Hongling Xiao, Hong Chen, Chun Feng, Guangdi Shen, Zhanguo Wang, Xun HouEur. Phys. J. Appl. Phys., 62 2 (2013) 20105Published online: 2013-05-22 , DOI: 10.1051/epjap/2013120390
Abstract | PDF (709.3 KB) -
Calorimetric study of thermal crystallization kinetics in Se78-xTe20Sn2Pbx (0 ≤ x ≤ 6) alloys
H. Kumar, N. MehtaEur. Phys. J. Appl. Phys., 62 2 (2013) 20106Published online: 2013-05-22 , DOI: 10.1051/epjap/2013120463
Abstract | PDF (443.0 KB) -
Study of structural and electrical properties of zinc oxide and Al-doped zinc oxide thin films deposited by DC sputtering
Amira Barhoumi, Liu Yang, Nawfel Sakly, Habib Boughzala, Gérard Leroy, Joël Gest, Jean-Claude Carru, Samir GuermaziEur. Phys. J. Appl. Phys., 62 2 (2013) 20302Published online: 2013-05-22 , DOI: 10.1051/epjap/2013120535
Abstract | PDF (407.7 KB) -
Fabrication and temperature-dependent band gap shrinkage of α-phase Bi2O3 thin films grown by atomic layer deposition method
Yude Shen, Yawei Li, Kai Jiang, Jinzhong Zhang, Zhihua Duan, Zhigao Hu, Junhao ChuEur. Phys. J. Appl. Phys., 62 2 (2013) 20303Published online: 2013-05-22 , DOI: 10.1051/epjap/2012130133
Abstract | PDF (653.4 KB) -
The estimation of size and position of contaminating particle adhering to the insulating spacer surface in gas-insulated systems
Yasin Khan, Firmansiah Nur Budiman, Abderrahmane Béroual, Nazar Hussain Malik, Abdulrehman Ali Al-ArainyEur. Phys. J. Appl. Phys., 62 2 (2013) 20801Published online: 2013-05-22 , DOI: 10.1051/epjap/2013130007
Abstract | PDF (858.3 KB) -
Organic field-effect transistors with a sandwich structure from inserting 2,2′,2″-(1,3,5-benzenetriyl)tris[1-phenyl-1H-benzimidazole] in the pentacene active layer
Xinge Yu, Junsheng Yu, Jianlin Zhou, Wei Huang, Hui LinEur. Phys. J. Appl. Phys., 62 2 (2013) 20101Published online: 2013-04-30 , DOI: 10.1051/epjap/2013120263
Abstract | PDF (643.2 KB) -
Selective plasma etching treatment of the screen-printed carbon nanotube cold cathode
Jun YuEur. Phys. J. Appl. Phys., 62 2 (2013) 20102Published online: 2013-04-30 , DOI: 10.1051/epjap/2013120298
Abstract | PDF (935.5 KB) -
Phase transition and elastic properties of beryllium sulfide semiconductor under high pressure
Feng Wang, Chenghua Hu, Jinghe Wu, Ping Zhou, Zhou Zheng, Chunlian HuEur. Phys. J. Appl. Phys., 62 2 (2013) 20103Published online: 2013-04-30 , DOI: 10.1051/epjap/2013130027
Abstract | PDF (1.703 MB) -
Reverse leakage mechanisms of liquid metal contacts onto II–VI group semiconductor (Ga/p-WSe2)
Achamma Bobby, Partha Sarathi Gupta, Bobby Kachappilly AntonyEur. Phys. J. Appl. Phys., 62 2 (2013) 20104Published online: 2013-04-30 , DOI: 10.1051/epjap/2013130018
Abstract | PDF (507.5 KB) -
Determination of the conduction mechanism and extraction of diode parameters of Au/PANI-TiO2/Al Schottky diode
Hojjat Amrollahi BiokiEur. Phys. J. Appl. Phys., 62 2 (2013) 20201Published online: 2013-04-30 , DOI: 10.1051/epjap/2013120545
Abstract | PDF (463.7 KB)
Editor-in-Chief
B. Drévillon
B. Drévillon




