Eur. Phys. J. AP 2, 107-110 (1998)
https://doi.org/10.1051/epjap:1998172

Conductivity in porous silicon^*

¹ Laboratoire de Physique des Semiconducteurs, Département de Physique, Faculté des Sciences de Monastir, 5000 Monastir, Tunisia
² Groupe de Physique des Solides, Universités Paris 6 et Paris 7, Tour 23, 2 place Jussieu, 75251 Paris Cedex 05, France

Corresponding author: bourgoin@gps.jussieu.fr

Received: 4 February 1997
Revised: 16 October 1997
Accepted: 27 February 1998
Published online: 15 May 1998

Abstract

Admittance spectroscopy has been performed on Al dots deposited on porous Silicon grown on p⁺ substrates. They exhibit d.c. current-voltage characteristics of a metal-insulator-semiconductor structure containing a large concentration of localized states in the insulator. The admittance is composed of a frequency (ω) independent conductance while the reactance varies as ω^s with s = 1. This strongly suggests that conduction through porous Silicon layers is governed by hopping between surface states.