The European Physical Journal Applied Physics (EPJ AP)

Disordered Semiconductors: Physics and Applications

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Regular Article

SEM, EDX spectroscopy and real-time optical microscopy of electroformed silicon nitride-based light emitting memory device

Mustafa Anutgan, Tamila Anutgan and Ismail Atilgan

Eur. Phys. J. Appl. Phys., 89 1 (2020) 10303

Published online: 07 April 2020

DOI: 10.1051/epjap/2020190300

Disordered Semiconductors: Physics and Applications

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Regular Article

Photoconductivity kinetics of indium sulfofluoride thin films

Yuri Vygranenko, Miguel Fernandes, Manuela Vieira, Guilherme Lavareda, Carlos Nunes de Carvalho, Pedro Brogueira and Ana Amaral

Eur. Phys. J. Appl. Phys., 89 1 (2020) 10302

Published online: 01 April 2020

DOI: 10.1051/epjap/2020190265

Disordered Semiconductors: Physics and Applications

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Regular Article

Defect absorption in selenium films by photothermal deflection spectroscopy

Tamihiro Gotoh

Eur. Phys. J. Appl. Phys., 89 1 (2020) 10301

Published online: 27 March 2020

DOI: 10.1051/epjap/2020190247

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Regular Article

The strain induced type-II band re-alignment of blue phosphorus-GeX (X = C/H/Se) heterostructures

Honglin Li, Yuting Cui, Haijun Luo and Wanjun Li

Eur. Phys. J. Appl. Phys., 89 1 (2020) 10103

Published online: 27 March 2020

DOI: 10.1051/epjap/2020190325

Disordered Semiconductors: Physics and Applications

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Regular Article

Study of nanocrystalline silicon-germanium for the development of thin film transistors

Arturo Torres, Mario Moreno, Pedro Rosales, Miguel Dominguez, Alfonso Torres, Alfredo Morales, Adrian Itzmoyotl and Javier de la Hidalga

Eur. Phys. J. Appl. Phys., 89 1 (2020) 10102

Published online: 27 March 2020

DOI: 10.1051/epjap/2020190264

Disordered Semiconductors: Physics and Applications

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Regular Article

Si surface passivation by using triode-type plasma-enhanced chemical vapor deposition with thermally energized film-precursors

Chisato Niikura, Yuta Shiratori and Shinsuke Miyajima

Eur. Phys. J. Appl. Phys., 89 1 (2020) 10101

Published online: 27 March 2020

DOI: 10.1051/epjap/2020190299

Advanced Electromagnetic Materials and Devices (META 2019)

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Regular Article

Split ring resonator loaded EF-structured left-handed metamaterial for modern electronic communications

Ahmed Mahfuz Tamim, Mohammad Rashed Iqbal Faruque, Mohammad Tariqul Islam and Sabirin Abdullah

Eur. Phys. J. Appl. Phys., 88 3 (2019) 30901

Published online: 03 March 2020

DOI: 10.1051/epjap/2020190311

Disordered Semiconductors: Physics and Applications

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Regular Article

Electroluminescence of thin film p-i-n diodes based on a-SiC:H with integrated Ge nanoparticles

Zdenek Remes, Jiri Stuchlik, The-ha Stuchlikova, Jaroslav Kupcik, Vincent Mortet, Andrew Taylor, Petr Ashcheulov and Vladimir Alekseevich Volodin

Eur. Phys. J. Appl. Phys., 88 3 (2019) 30302

Published online: 03 March 2020

DOI: 10.1051/epjap/2020190253

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Regular Article

Enhanced optical performance of thermochromic VO₂ based on multilayer designs

Houao Liu, Hao Song, Hao Xie and Guanchao Yin

Eur. Phys. J. Appl. Phys., 88 3 (2019) 30301

Published online: 03 March 2020

DOI: 10.1051/epjap/2020190339

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Regular Article

Effects of junction profiles in bottom protection p-well on electrical characteristics of 1.2 kV SiC trench-gate MOSFETs

Ogyun Seok, Hyoung Woo Kim, In Ho Kang, Min-Woo Ha and Wook Bahng

Eur. Phys. J. Appl. Phys., 88 3 (2019) 30103

Published online: 19 February 2020

DOI: 10.1051/epjap/2020190269

EPJ

The European Physical Journal Applied Physics (EPJ AP): 10 most recent articles

SEM, EDX spectroscopy and real-time optical microscopy of electroformed silicon nitride-based light emitting memory device

Photoconductivity kinetics of indium sulfofluoride thin films

Defect absorption in selenium films by photothermal deflection spectroscopy

The strain induced type-II band re-alignment of blue phosphorus-GeX (X = C/H/Se) heterostructures

Study of nanocrystalline silicon-germanium for the development of thin film transistors

Si surface passivation by using triode-type plasma-enhanced chemical vapor deposition with thermally energized film-precursors

Split ring resonator loaded EF-structured left-handed metamaterial for modern electronic communications

Electroluminescence of thin film p-i-n diodes based on a-SiC:H with integrated Ge nanoparticles

Enhanced optical performance of thermochromic VO₂ based on multilayer designs

Effects of junction profiles in bottom protection p-well on electrical characteristics of 1.2 kV SiC trench-gate MOSFETs

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The European Physical Journal Applied Physics (EPJ AP): 10 most recent articles

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