A comparative study of radiation damage on high resistivity silicon

P. Mangiagalli; M. Levalois; P. Marie; P. G. Rancoita; M. Rattaggi

doi:10.1051/epjap:1999161

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2024 Impact factor 0.9

Applied Physics

Eur. Phys. J. AP 6, 121-130 (1999)
https://doi.org/10.1051/epjap:1999161

A comparative study of radiation damage on high resistivity silicon

P. Mangiagalli¹, M. Levalois¹, P. Marie¹, P. G. Rancoita² and M. Rattaggi²

¹ LERMAT ISMRA (UPRESA 6004), 6 boulevard Maréchal Juin, 14050 Caen, France
² INFN, Sezione di Milano, via Celoria 16, 20100 Milano, Italia

Corresponding author: levalois@labolermat.ismra.fr

Received: 13 July 1998
Revised: 20 November 1998
Accepted: 18 January 1999
Published online: 15 May 1999

Abstract

In future particle accelerators, silicon detectors will be exposed with large doses of different types of radiation. To understand the corresponding produced damage mechanisms, a systematic study of the influence of the irradiation on the silicon from which the detectors are made has to be carried out. Samples of low n-doped silicon $(n\leq 10^{12}~{\rm cm}^{-3})$ have been irradiated with swift krypton ions $(\langle E\rangle=5.2~{\rm GeV})$ , neutrons from a nuclear reactor $(\langle E\rangle \sim 1~{\rm MeV})$ and energetic electrons $(\langle E\rangle=1.5~{\rm MeV})$ . Resistivity and Hall effect measurements performed after irradiation show that the silicon is changed to a quasi-intrinsic state, characterized by a very high resistivity. The electrically active defects responsible for that evolution are Maynly acceptor centers, namely divacancy and/or vacancy-doping complexes. Besides, for the highest fluences, only the appearance of a donor center located at about 0.59 eV below the conduction band may explain the observed stabilization of the Fermi level at 0.61 eV. Finally, using a simulation method, the rates of generation of the different defects are estimated.