Eur. Phys. J. AP 8, 1-5 (1999)
https://doi.org/10.1051/epjap:1999222

Ebic contrast in a polycrystalline semiconductor: Grain size dependence^*

¹ Université de Annaba, Institut de Physique, B.P. 12, 23000 Annaba, Algeria
² Université de Paris-Sud, LPS, btiment 510, 91405 Orsay, France

Received: 4 February 1997
Revised: 4 February 1998
Accepted: 17 May 1999
Published online: 15 October 1999

Abstract

Using the perturbation method (Born approximation), a theoretical model has been developed to account for the EBIC intensities and contrasts likely to occur in an n-type polycrystalline semiconductor, as a function of the grain size. The influence of the minority charge carrier diffusion length and the primary electron beam energy have also been examined, respectively.