Eur. Phys. J. AP 8, 105-109 (1999)
https://doi.org/10.1051/epjap:1999235

Characteristics of Pt/PbZr_0.52Ti_0.48O₃/Pt and Au/PbZr_0.52Ti_0.48O₃/YBa₂Cu₃O_7−δ capacitors after γ-ray irradiation

¹ Shanghai Institute of Nuclear Research, the Chinese Academy of Sciences, Shanghai 201800, P.R. China
² State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, the Chinese Academy of Sciences, Shanghai 200050, P.R. China

Corresponding author: jxgao@guomai.sh.cn

Received: 13 January 1999
Revised: 29 July 1999
Accepted: 12 August 1999
Published online: 15 September 1999

Abstract

PbZr_0.52Ti_0.48O₃ (PZT) and YBa₂Cu₃O_7−δ (YBCO) thin films were fabricated by a pulsed laser deposition (PLD) method. The Pt/PZT/Pt ferroelectric capacitors were fabricated on silicon substrates while the Au/PZT/YBCO capacitors were fabricated on LaAlO₃ substrates. The capacitance-voltage (C-V) properties and the hysteresis loops of the capacitors were measured before and after γ-ray irradiation. The results show that for Pt/PZT/Pt capacitors, the remanent polarization P_r and the absolute coercive field E_C increase while the dielectric constant ε decrease with increasing accumulated dose. For the Au/PZT/YBCO capacitors, P_r and ε decreased with accumulated dose, but the absolute value of the negative and positive coercive fields increased. The results have been interpreted by radiation-induced positive charge trapping at defects in the ferroelectric materials.