Eur. Phys. J. AP 8, 139-145 (1999)
https://doi.org/10.1051/epjap:1999239

Fabrication of co-planar metal-insulator-metal solid state nanojunctions down to 5 nm

¹ CEMES-CNRS, 29 rue Jeanne Marvig, B.P. 4347, 31055 Toulouse Cedex, France
² LAAS-CNRS, 7 avenue du Colonel Roche, 31077 Toulouse Cedex, France

Received: 18 March 1999
Revised: 13 September 1999
Accepted: 13 September 1999
Published online: 15 September 1999

Abstract

An optimised process is presented to fabricate co-planar metal-insulator-metal nanojunctions down to an inter-electrode distance of 5 nm. Simulation of the e-beam insulation of the PMMA/SiO₂/Si interface is used to optimise the PMMA resist thickness and the exposure strategy. The process was well stabilised to provide a full statistical analysis of the number of nanojunctions produced per wafer. A 10% throughput was reached for 5 nm giving a mass production of about 100 nanojunctions per 2 inches wafer all equipped with their interconnection pads.