Eur. Phys. J. AP 9, 19-24 (2000)
https://doi.org/10.1051/epjap:2000194

Ce³⁺ luminescent centres in atomic layer epitaxy SrS thin film electroluminescent devices

¹ Laboratoire d'Optique des Solides (UMR 7601 du CNRS), Université Pierre et Marie Curie, Case n° 80, 4 place Jussieu, 75252 Paris, France
² Institut de Chimie de la Matière Condensée de Bordeaux, CNRS, 33608 Pessac Cedex, France
³ Planar Systems Inc., Olarinluoma 9, P.O. Box 46, FIN, 02201 Espoo, Finland

Corresponding author: pben@ccr.jussieu.fr

Received: 9 July 1999
Revised: 16 September 1999
Accepted: 5 October 1999
Published online: 15 January 2000

Abstract

A luminescent study under selective photonic excitation has established the presence of three different kinds of Ce³⁺ centres in SrS atomic layer epitaxy thin films: one in a regular sulfur octahedral sites and two others in lower symmetry. These last sites shift the emission spectra towards the green. High thermal annealing up to 750 °C improves the crystallinity of the SrS:Ce layer by converting low symmetry Ce³⁺ sites in regular octahedral sites and decreasing the density of defects. These two effects lead to efficient PL layers with a good blue chromaticity.