Eur. Phys. J. AP 15, 117-121 (2001)
https://doi.org/10.1051/epjap:2001103

Simulation of 2D quantum effects in ultra-short channel MOSFETs by a finite element method^*

Laboratoire de Physique de la Matière (UMR-CNRS 5511), INSA-Lyon, 20 avenue Albert Einstein, 69621 Villeurbanne, France

Corresponding author: poncet@lpm.insa-lyon.fr

Received: 20 November 2000
Revised: 18 April 2001
Accepted: 27 April 2001
Published online: 15 August 2001

Abstract

This paper presents a flexible numerical technique which is especially suited to analyze lateral modulation of quantum effects in short channel MOS transistors. We discuss boundary conditions for the Schrödinger equation and the impact of the finite element meshing. We show how channel length shortening alters the sub-band structure, thus giving an evaluation of the limits of a 1D quantum approach.