https://doi.org/10.1051/epjap:2001198
AC conductivity and dielectric properties of In2S3 films
1
Physics Department, Faculty of Education, Ain Shams University, Egypt
2
Physics Department, Faculty of Science, Zagazig University, Egypt
Corresponding author: elfalaky@hotmail.com
Received:
14
March
2000
Revised:
19
June
2001
Accepted:
19
June
2001
Published online: 15 November 2001
Stoichiometric In2S3 films were prepared by thermal evaporation
technique onto clean glass substrates. According to X-ray investigations,
the as-deposited films were in amorphous state. Both the ac conductivity
and dielectric constants were measured in the frequency range 100 Hz−100 kHz at different temperatures. Different parameters such as the
frequency exponent parameter s, the density of states near the Fermi level
, the activation energy 
and the optical band gap Eg of In2S3 amorphous thin films were estimated. The hopping conduction was
recognized as the conduction mechanism for the investigated films.
PACS: 72.20.-i – Conductivity phenomena in semiconductors and insulators / 73.61.-r – Electrical properties of specific thin films / 77.55.+f – Dielectric thin films
© EDP Sciences, 2001
