https://doi.org/10.1051/epjap:2002016
Annealing behaviour of boron implanted defects in Si detector: impact on breakdown performance
Centre for Detector and Related Software Technology, Department of Physics, University of Delhi, Delhi-110007, India
Corresponding author: hep@nda.vsnl.net.in
Received:
10
August
2001
Revised:
6
December
2001
Accepted:
12
December
2001
Published online: 15 March 2002
Electrical properties of a device depend primarily on the active dopant concentration; understanding of the activation (annealing) process is crucial for the prediction of device behaviour. The present paper reports results from a computer based simulation approach to improve the breakdown performance of the device by studying the annealing behaviour of boron implanted in silicon. In order to have deep insight of the effect of defect complexes on the device performance, extended defect model has been incorporated in the simulation program. Optimization of annealing time, annealing temperature and dose has been performed, for the first time, incorporating a complete set of process induced defects like {113} defects, interface traps, dislocation loops and the optimization has been validated in terms of the breakdown performance of the device.
PACS: 29.40.-n – Radiation detectors / 29.40.Wk – Solid-state detectors
© EDP Sciences, 2002
