Stabilization of a 1.55 μm extended-cavity semiconductor laser by intracavity dynamic holography
Laboratoire Charles Fabry de l'Institut d'Optique (Unité Mixte de Recherche 8501 du CNRS), Bât. 503, Centre Scientifique d'Orsay, BP 147, 91403 Orsay Cedex, France
2 NetTest, Photonics Division, 45 avenue Jean Jaurès, BP 81, 78344 Les Clayes-sous-Bois, France
Accepted: 28 March 2002
Published online: 15 November 2002
Commercial grating-tuned single-mode extended-cavity semiconductor lasers (ECLD's) can be tuned over 100 nm around 1.55 μm. This continuous tuning with no mode-hopping requires delicate factory adjustments and a high mechanical stability. These constrains are relaxed by the adjunction of a photorefractive crystal inside the cavity which creates an adaptive spectral filter which decreases the loss of the lasing-mode and thus enhances its stability.
PACS: 42.55.Px – Semiconductor lasers; laser diodes / 42.60.-v – Laser optical systems: design and operation / 42.65.Hw – Phase conjugation, optical mixing, and photorefractive effect
© EDP Sciences, 2002