https://doi.org/10.1051/epjap:2002091
Stabilization of a 1.55 μm extended-cavity semiconductor laser by intracavity dynamic holography
1
Laboratoire Charles Fabry de l'Institut d'Optique (Unité Mixte de Recherche 8501 du CNRS), Bât. 503, Centre Scientifique d'Orsay, BP 147, 91403 Orsay Cedex, France
2
NetTest, Photonics Division, 45 avenue Jean Jaurès, BP 81,
78344 Les Clayes-sous-Bois, France
Corresponding authors: antoine.godard@iota.u-psud.fr gilles.pauliat@iota.u-psud.fr
Received:
11
December
2001
Accepted:
28
March
2002
Published online:
15
November
2002
Commercial grating-tuned single-mode extended-cavity semiconductor lasers (ECLD's) can be tuned over 100 nm around 1.55 μm. This continuous tuning with no mode-hopping requires delicate factory adjustments and a high mechanical stability. These constrains are relaxed by the adjunction of a photorefractive crystal inside the cavity which creates an adaptive spectral filter which decreases the loss of the lasing-mode and thus enhances its stability.
PACS: 42.55.Px – Semiconductor lasers; laser diodes / 42.60.-v – Laser optical systems: design and operation / 42.65.Hw – Phase conjugation, optical mixing, and photorefractive effect
© EDP Sciences, 2002
