Eur. Phys. J. Appl. Phys. 25, 11-23 (2004)
https://doi.org/10.1051/epjap:2003076

Analysis and modeling of the self-heating effect in SiGe HBTs

¹ Laboratoire de Microélectronique IXL, UMR 5818, University of Bordeaux I, 33405 Talence, France
² LEPT – ENSAM, Esplanade des Arts et Métiers, 33405 Talence, France

Corresponding author: mnif@ixl.fr

Received: 2 April 2003
Revised: 23 July 2003
Accepted: 31 July 2003
Published online: 13 October 2003

Abstract

This paper investigates the self-heating effect in SiGe heterojunction bipolar transistors. A physical study leads to a nonlinear physical model describing static and dynamic self-heating mechanism. The implementation of this model using an electrical equivalent circuit is presented. Our approach is validated using measurements on devices from different technologies. System configuration, measurement, and calibration issues are presented.