https://doi.org/10.1051/epjap:2004156
Microstructure and morphology evolution in chemical solution deposited semiconductor films: 2. PbSe on As face of GaAs(111)
Department of Materials Engineering and the Ilse Katz Center for Nanoscience and Nanotechnology, Ben-Gurion University of the Negev, Beer-Sheva 84105, Israel
Corresponding author: ygolan@bgumail.bgu.ac.il
Received:
6
January
2004
Revised:
21
March
2004
Accepted:
30
March
2004
Published online:
25
June
2004
Nanocrystalline PbSe films were grown on GaAs(100) and on the As face of
GaAs(111) substrates using chemical solution deposition. The microstructure
of the films was found to be strongly affected by the deposition temperature
over a surprisingly narrow temperature range. In PbSe deposited on
GaAs(100), gradual increase in crystallite size and transition to 
111
texture were obtained with increasing temperature. In contrast with PbSe
deposited on GaAs(100), the 111 texture in PbSe on GaAs(111) dominated
throughout the deposition temperature range. Since temperature directly
affects reaction rate, the temperature-dependent morphological changes
observed in this work occur primarily due to increasing sample thickness.
PACS: 68.55.Jk – Structure and morphology; thickness; crystalline orientation and texture / 81.07.Bc – Nanocrystalline materials / 81.15.Lm – Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
© EDP Sciences, 2004
