https://doi.org/10.1051/epjap:2004209
Subband structure and band bending in symmetric modulation-doped double quantum wells
1
Cumhuriyet University, Department of Physics, 58140 Sivas, Turkey
2
Dokuz Eylul University, Department of Physics, Izmir, Turkey
Corresponding author: eozturk@cumhuriyet.edu.tr
Received:
30
October
2003
Revised:
30
January
2004
Accepted:
1
July
2004
Published online:
21
December
2004
We have calculated the subband structure and confinement potential
of modulation-doped Ga
AlxAs-GaAs symmetric double quantum wells
a function of the doping concentration. Electronic properties of this
structure are determined by solving the Schrödinger and Poisson
equations self-consistently. To understand the exchange correlation
potential effects on the band bending and subband populations, this
potential has been included in the calculation at 0 K and, at room
temperature. We find that at low doping concentrations the effect of the
exchange correlation potential is more pronounced on the subband
populations.
PACS: 73.90.+f – Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures
© EDP Sciences, 2005
