https://doi.org/10.1051/epjap:2005032
High-performance InP/InGaAs pnp δ-doped heterojunction bipolar transistor
Department of Physics, National Kaohsiung Normal University
116, Ho-ping 1st Road, Kaohsiung, Taiwan, Republic of China
Corresponding author: jhtsai@nknucc.nknu.edu.tw
Received:
17
March
2004
Revised:
25
November
2004
Accepted:
21
January
2005
Published online:
14
April
2005
A high-performance InP/InGaAs 
-doped pnp heterojunction bipolar
transistor (HBT) has been first fabricated and demonstrated. The addition of
a -doped sheet between two undoped spacer layers effectively
eliminates the potential spike at emitter-base junction, lowers the
emitter-collector offset voltage, and increases the barrier for electrons,
simultaneously. Experimentally, a maximum current gain of 50 and a low
offset voltage of 70 mV are obtained, respectively. To our knowledge, the
offset voltage of the studied device is the lowest value for the reported
InP/InGaAs pnp HBTs.
PACS: 73.61.Ey – III-V semiconductors / 73.40.Kp – III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
© EDP Sciences, 2005
