https://doi.org/10.1051/epjap:2005050
Current-voltage-temperature analysis of inhomogeneous Au/n-GaAs Schottky contacts
Atatürk University, Faculty of Science and Arts, Department of Physics,
25240 Erzurum, Turkey
Corresponding author: mehbib@atauni.edu.tr
Received:
28
September
2003
Revised:
1
March
2005
Accepted:
24
March
2005
Published online:
18
August
2005
The forward current-voltage (I-V) characteristics of
Au/n-GaAs Schottky barrier diodes (SBDs) have been studied over a wide
temperature range (80–300 K). The barrier height inhomogeneities by assuming
a Gaussian distribution of barrier heights at the interface were observed.
The evaluation of the experimental I-V data reveals a non-linear increase of
the zero-bias barrier height (
). To remove the spatial
inhomogeneity of the barrier height based on small regions or patches and to
increase the barrier height compared to the reference sample Au/n-GaAs, the
front surface of the n-type GaAs semiconductor has been oxidized by the
anodic oxidation method and metal/insulating/semiconductor (MIS) Au/n-GaAs
SBDs have been formed. The ln(
) versus 1/T and versus
T plots of the MIS have exhibited the linear behavior in the temperature
range of 80–300 K. Thus, the I-V data of the MIS diodes have obeyed the
interfacial layer model due to the interfacial layer and it has been
concluded that the inhomogeneity of the barrier height can be disappeared by
a formed interfacial layer at the metal and semiconductor interface.
PACS: 73.30 +y – Surface double layers, Schottky barriers, and work functions / 73.40.Ns – Metal-nonmetal contacts / 73.40. Ty – Semiconductor-insulator-semiconductor structures
© EDP Sciences, 2005
