Eur. Phys. J. Appl. Phys. 36, 215-218 (2006)
https://doi.org/10.1051/epjap:2006139

Study of traps in polydiacetylene based devices using TSC technique ^*

¹ Université de Nantes, Institut des Matériaux Jean Rouxel, 2 rue de la Houssinière, 44322 Nantes Cedex 3, France
² Department of Applied Chemistry, National Chiao Tung University, Hsinchu 300, Taiwan

Corresponding author: cedric.renaud@cnrs-imn.fr

Received: 25 July 2006
Accepted: 6 October 2006
Published online: 6 December 2006

Abstract

Trap parameters in poly(1-(3,4-difluorophenyl)-2-(4-pentylcyclohexylphenyl)acetylene) (PDPA-2F) based devices have been investigated by using the thermally stimulated current (TSC) technique. The device structure is ITO-PEDOT-(PDPA-2F)-M, where M stands for the cathode metal (Al, Ca/Al, and Au). The results reveal at least three TSC peaks in devices denoted as peaks A, B and C. Comparing trap parameters in ITO-PEDOT-(PDPA-2F)-Au hole-only device and ITO-PEDOT-(PDPA-2F)-Ca Al (Al) bipolar devices, we assigned A and B trap types to hole-like traps and C type traps to electron-like traps. The trap densities are in the range of 10¹⁵−10¹⁷ cm⁻³ and the trap levels are 0.12 eV (A type traps), 0.36 eV (B type traps), and 0.25 eV (C type traps).