https://doi.org/10.1051/epjap:2007043
Thermoelectric properties and mobility activation energy of amorphous As20Se80−xTlx films
1
Physics Department Faculty of Sciences South Valley University, 6 Kilo Road, 83523, Qena, Egypt
2
Physics Department Faculty of Education Ain Shams University, Cairo, Egypt
Corresponding author: denglawey@lycos.com
Received:
7
March
2006
Revised:
9
December
2006
Accepted:
15
January
2007
Published online:
22
February
2007
Thermal evaporation technique was used to prepare
As20Se80−xTlx films from bulk materials;
(
at.%). The effect of TI addition on the thermoelectric
properties and mobility activation energy of As-Se-Tl chalcogenide
semiconductors has been studied in the homogeneous glass-forming region
through temperature range (300–380 K). The thermoelectric power, TEP had a
positive sign over the whole temperature range investigated, indicating
p-type conductivity for As20Se80−xTlx films. TEP activation
energy, 
could be calculated from TEP measurements. It was
found that decreases with increasing Tl-content and is
found to vary between 0.814 and 0.517 eV. The mobility activation
energy, 
could be calculated.
PACS: 61.43.Dq – Amorphous semiconductors, metals, and alloys / 72.15.Jf – Thermoelectric and thermomagnetic effects / 71.20.Gj – Other metals and alloys / 71.30.+h – Metal-insulator transitions and other electronic transitions
© EDP Sciences, 2007
