Eur. Phys. J. Appl. Phys. 38, 27-30 (2007)
https://doi.org/10.1051/epjap:2007045

Ge nanoparticles based MOS structure and their Raman characterization

Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi – 110 067, India

Corresponding author: ybatra@iuac.res.in

Received: 18 December 2006
Accepted: 24 January 2007
Published online: 22 February 2007

Abstract

Charge retention properties of Ge nanoparticles embedded in SiO₂ matrix are investigated. Formation of embedded Ge nanoparticles was accomplished by optimizing electron beam evaporation process. Size of Ge nanoparticles has been characterized by atomic force microscopy (AFM) which comes out to be ~15 nm. Presence of Ge nanoparticles is confirmed by micro-Raman analysis. Memory effect of Ge nanoparticles is verified by capacitance-voltage (C-V) measurements which show hysteresis in the C-V curves.