https://doi.org/10.1051/epjap:2007028
Full characterization at 904 nm of large area Si p-n junction photodetectors produced by LID technique
1
Solar Cells and Applied Physics Center, Ministry of Science and Technology, Baghdad, Iraq
2
NASSR State Company, Ministry of Industry and Minerals, Baghdad, Iraq
3
School of Applied Sciences, University of Technology, Baghdad, Iraq
4
PO Box 55159, Baghdad 12001, Iraq
Corresponding author: odayata2001@yahoo.com
Received:
12
September
2006
Accepted:
28
September
2006
Published online:
31
January
2007
In this paper, we report the experimental data of photoresponse namely; voltage responsivity and speed of response at λ = 904 nm of silicon photodiode formed by pulsed laser-induced diffusion technique. Experimental results demonstrated that the photodiode parameters strongly depend on the laser energy and substrate temperature. Maximum Responsivity obtained for p-n junctions photodetectors prepared by laser fluence of 9.17 J/cm2 for Al-doped Si and 10.03 J/cm2 for Sb-doped Si at substrate temperature (Ts) of 598 K. The pulse response waveform of photodetectors illustrated that the rise time is not dominated by RC. Non-linearity deviation coefficient was improved by factors 1.6 for and 2.7 for for Al-doped Si and Sb-doped Si photodetectors respectively when Ts is raised from 300 K to 598 K.
PACS: 61.72.-y – Defects and impurities in crystals; microstructure / 73.40.Lq – Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions / 42.62.-b – Laser applications
© EDP Sciences, 2007
