Eur. Phys. J. Appl. Phys. 39, 17-21 (2007)
https://doi.org/10.1051/epjap:2007100

Deposition of DLC:H films by C-sputtering assisted CH₄-Ar PE-CVD technique

¹ Faculty of Engineering and HRC, Kansai University, Suita, Osaka, 564-8680, Japan
² Faculty of Informatics, Kansai University, Takatsuki, Osaka, 569-1095, Japan

Corresponding author: kyokota@ipcku.kansai-u.ac.jp

Received: 5 April 2007
Revised: 3 May 2007
Accepted: 16 May 2007
Published online: 28 June 2007

Abstract

Hydrogenated diamond-like carbon (DLC:H) films were deposited on Si substrates by a methane (CH₄)-argon (Ar) plasma enhanced chemical vapor deposition (PE-CVD) technique assisted by carbon (C) sputtering. The deposition rates of DLC:H films increased with increasing Ar gas flow rate under a CH₄ gas flow rate, and saturated at large Ar gas flow rates. The dielectric constants varied from 2.2 ε₀ on DLC:H films deposited without Ar gas flow to 6.3 ε₀ on DLC:H films deposited with large Ar gas flow. The C – V curve for the sweep of bias voltages from positive to negative was positioned above that of the return sweep of bias voltages from negative to positive because electrons are injected from Si substrates to the surfaces of DLC:H films. The C – V curve on the returning bias voltage sweep approached that of the going bias voltage sweep accompanying to an increase in dielectric constant.