Eur. Phys. J. Appl. Phys. 39, 233-236 (2007)
https://doi.org/10.1051/epjap:2007117

Passively Q-switched mode-locking of diode-pumped Nd:YVO₄ laser with GaAs intracavity absorber grown at low temperature

¹ College of Physics and Electronics, Shandong Normal University, Jinan 250014, P.R. China
² Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100022, P.R. China

Corresponding author: jieliu@sdnu.edu.cn

Received: 25 May 2007
Accepted: 14 June 2007
Published online: 12 July 2007

Abstract

Using a low temperature grown GaAs wafer as an intracavity saturable absorber, a temporal envelope duration of 11 ns of Q-switched and mode-locked (QML) 1064 nm operation was achieved in a very simple compact plane-concave cavity Nd:YVO₄ laser, it was so short that the pulses can be used as Q-switching pulses. The maximal average output power is 808 mW with the repetition rate of 25 kHz, and the corresponding peak power and energy of a single Q-switched pulse was 2.94 kW and 32.3 µJ, respectively. The mode-locked pulse trains inside the Q-switched pulse envelope had a repetition rate of 800 MHz.