https://doi.org/10.1051/epjap:2008127
The interface optical phonon and electron-phonon interaction in GaN/AlN spherical heterostructures
1
Department of Physics, Shaanxi University of Technology, Hanzhong 723001, Shaanxi, P.R. China
2
College of Physics and Information Engineering, Henan Normal University, Xinxiang 453007, Henan, P.R. China
Corresponding author: sxlgwendeng@163.com
Received:
22
November
2007
Revised:
18
February
2008
Accepted:
25
April
2008
Published online:
19
June
2008
Based on the dielectric-continuum model, the expression
of polarization eigenvector, the dispersion relations, and the
electron-phonon interaction Fröhlich-like Hamiltonian for interface
optical (IO) phonons in multilayer GaN/AlN spherical heterostructures are
obtained. As an application of the theory, the dispersion relations and
electron-phonon coupling function strengths of the IO phonons are calculated
for four-layer GaN/AlN/GaN/AlN spherical heterostructures. The results show
that the lower frequency phonons have a much greater contribution to the
coupling function 
than higher frequency phonons.
PACS: 63.20.Kr – Phonon-electron and phonon-phonon interactions / 71.38.-k – Polarons and electron-phonon interactions / 73.20.At – Surface states, band structure, electron density of states
© EDP Sciences, 2008
