https://doi.org/10.1051/epjap:2008130
Simulation on the effects of torsion strain on the mechanical properties of SiC nanowires under tensile and compressive loading
Department of Applied Physics, University of Electronic Science and Technology of China, Chengdu 610054, P.R. China
Corresponding author: zgwang@uestc.edu.cn
Received:
1
April
2008
Accepted:
30
May
2008
Published online:
17
July
2008
Molecular dynamics simulations with Tersoff potentials were used to study the tensile and compressive mechanical behavior of SiC nanowires with torsion strain. The simulation results show that small torsion strain does not affect the mechanical behavior of SiC nanowires. However, large torsion strain induces the decrease of the critical stress. With large torsion strain, the collapse occurs in the nanowires before tensile failure and compressive buckling, and deformation zone occurs in the collapsed part.
PACS: 62.25.-g – Mechanical properties of nanoscale systems / 02.70.Ns – Molecular dynamics and particle methods
© EDP Sciences, 2008
