https://doi.org/10.1051/epjap/2009003
Theoretical and experimental operating wavelength of GaAs/Al0.25Ga0.75As IR photodetectors
1
Équipe d'Étude des Matériaux Optoélectroniques (E.E.M.O.),
LP2M2E F.S.T.G., BP 549 Marrakech, Morocco
2
Foundation for Research and Technology – Hellas (FORTH)/I.E.S.L
Microelectronics, Research Group Vassilika Vouton, P.O. Box 1527, 71110 Heraklion, Crete,
Greece
Corresponding author: almaggoussi@menara.ma
Received:
27
October
2008
Accepted:
9
November
2008
Published online:
31
January
2009
IR photodetectors based on GaAs/Al0.25Ga0.75As multiquantum wells
(QWIP) grown by molecular beam epitaxy (MBE) are studied. The envelop
function formalism is used to determine the theoretical intersubband
transition energies. The electronic states are calculated in both parabolic
and non parabolic cases. IR spectroscopy transmission is used as the
experimental technique to evaluate the optical absorption. The measures are
made at 77 K for incidence at both 45° and Brewster angles geometries.
The last experimental results compare well with the theoretical ones and
correspond to 10–12 
m operating wavelength.
PACS: 78.67.De – Quantum wells
© EDP Sciences, 2009
