Eur. Phys. J. Appl. Phys. 46, 12504 (2009)
https://doi.org/10.1051/epjap/2009017

Doping of poly(3-hexylthiophene) nanofibers: microscopic morphology and electrical properties

¹ Laboratory for Chemistry for Novel Materials, University of Mons Hainaut/Materia Nova, 20 Place du Parc, 7000 Mons, Belgium
² Molecular Nanostructures and Devices group, Institute for Electronics, Microelectronics and Nanotechnology (IEMN), CNRS, Avenue Poincaré, BP 60069, 59652 Cedex, Villeneuve d'Ascq, France

Corresponding author: sdesbief@averell.umh.ac.be

Received: 20 October 2008
Accepted: 18 December 2008
Published online: 10 March 2009

Abstract

The microstructure of thin deposits of poly(3-hexylthiophene) on silicon surfaces is investigated as a function of the solution concentration, the maturation time and the solvent nature, with the aim of generating one monolayer of P3HT nanofibers on the surface. These films are then exposed to a NOPF₆ solution, in order to oxidize the conjugated system and to produce conducting nanostructures. The effect of the chemical doping on the microscopic morphology and the electrical properties is analyzed on the basis of AFM and I-V measurements.