https://doi.org/10.1051/epjap/2009047
Electrical properties of Se–Zn–In chalcogenide glasses
Department of physics, Banaras Hindu University, 221005 Varanasi, India
Corresponding author: kedar_abhay@rediffmail.com
Received:
5
September
2008
Revised:
20
January
2009
Accepted:
9
February
2009
Published online:
27
March
2009
Electrical measurements of Se
Zn2InX (X = 0, 2, 4, 6 and 10) chalcogenide glasses have been carried out at room temperature. I-V characteristic of the present glasses were recorded upto 200 V. A drastic changes in I-V characteristic have been observed between 180 to 200 V for 4, 6, 10 at% of indium. The composition dependence of electrical conductivity is also discussed.
PACS: 63.50.Lm – Glasses and amorphous solids / 72.15.Cz – Electrical and thermal conduction in amorphous and liquid metals and alloys / 61.43.Dq – Amorphous semiconductors, metals, and alloys
© EDP Sciences, 2009
