Eur. Phys. J. Appl. Phys. 48, 10302 (2009)
https://doi.org/10.1051/epjap/2009115

Effect of tellurium substitution in Sn₁₀Sb₂₀Se_70−X Te_X (0 < X < 12) amorphous chalcogenide system

Semiconductor Laboratory, Department of Applied Physics, Guru Nanak Dev University, Amritsar 143005, India

Corresponding author: rcohri@gmail.com

Received: 14 September 2008
Accepted: 27 April 2009
Published online: 4 July 2009

Abstract

The as-prepared samples of Sn₁₀Sb₂₀Se Te_X chalcogenide system were amorphous as evidenced by X-ray diffraction and Differential scanning calorimetry studies. The different crystalline phases emerged in annealed Sn₁₀Sb₂₀Se Te_X samples have been identified. Glass transition temperature T_g of the as-prepared samples decreases sharply with tellurium substitution upto 2 at% and then it starts increasing upto 10 at% and decreases again on further substitution of tellurium. The change in glass transition temperature T_g has been explained based on bond formation energy of different heteropolar bonds and crystalline phases obtained in the annealed samples with different tellurium contents.