Eur. Phys. J. Appl. Phys. 48, 20303 (2009)
https://doi.org/10.1051/epjap/2009161

InGaP/GaAs camel-like gate field-effect transistor with InGaAs pseudomorphic doped-channel layer

¹ Department of Electronic Engineering, National Kaohsiung Normal University, 116 Ho-ping 1st Road, Kaohsiung 802, Taiwan
² Department of Electrical Engineering, National Taiwan Ocean University, 2 Peining Road, Keelung, Taiwan

Corresponding author: jhtsai@nknucc.nknu.edu.tw

Received: 10 January 2009
Revised: 22 June 2009
Accepted: 28 July 2009
Published online: 2 October 2009

Abstract

In this paper, we first fabricate and demonstrate the InGaP/GaAs camel-like gate field-effect transistor with InGaAs pseudomorphic heavy-doped channel. Due to the large gate potential barrier for the use of the n⁺-GaAs/p⁺-InGaP/n-GaAs camel-like gate and the thin as well as heavy doping n⁺-InGaAs channel layer, the effective conduction band discontinuity is substantially extended and a high gate turn-on voltage up to 2.0 V is obtained. The device exhibits a relatively broad gate voltage swing resulting from the high gate turn-on voltage. In addition, a maximum drain current of 393 mA/mm and a maximum transconductance of 96 mS/mm are measured. These results indicate that the studied device is suitable for signal amplifier and linear circuit applications.