https://doi.org/10.1051/epjap/2009175
Dark electrical and photovoltaic properties of Schottky device based on organic thin film of 4-tricyanovinyl-N, N-diethylaniline
Physics Department, Faculty of Education, Ain Shams University, Rorxy Square
11757, Cairo, Egypt
Corresponding author: aaadarwish@gmail.com
Received:
14
September
2008
Revised:
17
April
2009
Accepted:
14
September
2009
Published online:
30
October
2009
The electrical and photovoltaic characteristics of thermally evaporated thin films of 4-tricyano- vinyl-N,N-diethylaniline sandwiched between indium tin oxide and aluminium has been investigated. Dark current density-voltage characteristics under forward bias are found to be due to thermionic emission conduction at lower voltage region. While, at higher voltage region there is space-charge-limited conduction controlled by exponential trap distribution above the valance edge. Reverse bias curve is interpreted in terms of Poole-Frenkel effect. The device exhibits photovoltaic characteristics when it illuminated through Al electrode. The typical photovoltaic parameters were estimated at room temperature and under light illumination with an input power density of 80 mW/cm−2.
PACS: 73.40.Lq – Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions / 73.50.Pz – Photoconduction and photovoltaic effects / 85.60.Bt – Optoelectronic device characterization, design, and modeling
© EDP Sciences, 2009
