Transparent pentacene-based photoconductor: high photoconductivity effect
LPSMS, FST Errachidia, BP 509, Boutalamine, Errachidia, Morocco
2 XLIM UMR 6172-Université de Limoges/CNRS, 123 av. Albert Thomas, 87060 Limoges Cedex, France
Corresponding author: firstname.lastname@example.org
Accepted: 10 June 2010
Published online: 2 September 2010
In this paper, the fabrication and characterisation of pentacene-based photoconductors using indium tin oxide electrodes obtained by ion beam sputtering are discussed. The photoelectric properties of pentacene under red (632 nm) and ultraviolet (365 nm) illuminations were investigated. We have shown that the photocurrent was dependent on the wavelength, bias voltage and illumination side of the device. Moreover, we have demonstrated with transparent electrodes that the top contact configuration yields better performance compared to the bottom contact configuration. We obtained a maximum photoconductivity gain of approximately 3 × 103 and a faster dynamic response when the photoconductor with top contact geometry was illuminated with ultraviolet light from the semiconductor side (top illumination), with a photoconductivity estimated at 10-4 cm-1.
© EDP Sciences, 2010