https://doi.org/10.1051/epjap/2010109
Transparent pentacene-based photoconductor: high photoconductivity effect
1
LPSMS, FST Errachidia, BP 509, Boutalamine, Errachidia, Morocco
2
XLIM UMR 6172-Université de Limoges/CNRS, 123 av. Albert
Thomas, 87060 Limoges Cedex, France
Corresponding author: bruno.lucas@unilim.fr
Received:
29
July
2009
Accepted:
10
June
2010
Published online:
2
September
2010
In this paper, the fabrication and characterisation of
pentacene-based photoconductors using indium tin oxide electrodes obtained
by ion beam sputtering are discussed. The photoelectric properties of
pentacene under red (632 nm) and ultraviolet (365 nm) illuminations were
investigated. We have shown that the photocurrent was dependent on the
wavelength, bias voltage and illumination side of the device. Moreover, we
have demonstrated with transparent electrodes that the top contact
configuration yields better performance compared to the bottom contact
configuration. We obtained a maximum photoconductivity gain of approximately
3 × 103 and a faster dynamic response when the photoconductor
with top contact geometry was illuminated with ultraviolet light from the
semiconductor side (top illumination), with a photoconductivity estimated at
10-4 
cm-1.
© EDP Sciences, 2010
