Eur. Phys. J. Appl. Phys. 52, 30302 (2010)
https://doi.org/10.1051/epjap/2010100281

Current transport characteristics of pSe-nMoSe₂ heterojunction diode

¹ Department of Physics, Faculty of Engineering and Technology, CHARUSAT, 388 420 Changa, Anand, India
² Department of Physics, Sardar Patel University, Vallabh Vidyanagar, 388 120 Gujarat, Anand, India

Corresponding author: cksumesh.cv@ecchanga.ac.in

Received: 15 July 2010
Revised: 21 September 2010
Accepted: 27 September 2010
Published online: 30 November 2010

Abstract

The characteristics of heterojunction diode pSe-nMoSe₂ fabricated from thermally evaporated p-Se films on n-type Molybdenum diselenide (MoSe₂) grown by direct vapour transport (DVT) technique have been examined by using current-voltage measurements. To investigate the dark current transport mechanism in pSe-nMoSe₂ heterojunctions the current-voltage characteristics were measured in the temperature range 100–300 K. The prepared diode shows a rectification ratio of the order of 10³ within the range –2 to 2 V. A multi-step tunnelling model was used to analyze the I-V-T characteristics of the prepared device. The activation energy determined from the saturation current was about 1.16 eV.