Eur. Phys. J. Appl. Phys. 53, 10502 (2011)
https://doi.org/10.1051/epjap/2010100276

Effect of gamma irradiation on the shallow defect states of hydrogenated amorphous silicon films

¹ Department of Physical Engineering, Faculty of Engineering, Ankara University, 06100 Ankara, Turkey
² Department of Physics, Faculty of Science and Arts, Ahi Evran University, 40040 Kirsehir, Turkey

Corresponding author: yildizab@gmail.com

Received: 10 July 2010
Accepted: 30 September 2010
Published online: 23 December 2010

Abstract

The temperature dependence of the electrical conductivity before and after gamma irradiation of hydrogenated amorphous silicon (a-Si:H) films, prepared by the hot wire method, at a dose of 2 kGy of ⁶⁰Co gamma irradiation are presented and discussed. Fourier transform infrared spectroscopy (FTIR) measurements provide useful information on the characteristics of bond configurations in a-Si:H before and after gamma irradiation. The conductivity increased and the bond configurations changed significantly after gamma irradiation. The results are explained by the filling of shallow donor states and variation of bond type due to migration of hydrogen atoms under the effect of irradiation. The behaviour of the conductivity is consistent with a hopping mechanism. The temperature dependence of the conductivity of a-Si:H exhibits a law, instead of the law, after gamma irradiation.