https://doi.org/10.1051/epjap/2011100014
Photovoltaic responses of ZnO/Si heterojunctions synthesized by sol-gel method
1
Laboratory of Optic Sensing and Detecting Technology, China University of Petroleum, Beijing 102249, P.R. China
2
State Key Laboratory of Petroleum Resource and Prospecting, China University of Petroleum, Beijing 102249, P.R. China
3
International Center for Materials Physics, Chinese Academy of Sciences, Shenyang 110016, P.R. China
a
e-mail: zhk@cup.edu.cn
Received:
10
January
2010
Revised:
5
August
2010
Accepted:
15
March
2011
Published online:
21
July
2011
ZnO/Si heterojunctions were prepared by the sol-gel method and hexagonal polycrystalline wurtzite structures with pores were observed by a field emission scanning electron microscope. The steady photovoltage properties of ZnO/Si heterojunctions were obtained under the illumination of a 532 nm continuum solid state laser with a 50 Hz chopper. In addition ns photoresponse signals were found when the samples were excited by a ps pulsed laser at room temperature. A possible mechanism was proposed to describe the photovoltaic process in the ZnO/Si heterojunction.
© EDP Sciences, 2011
