https://doi.org/10.1051/epjap/2012120070
Fast Track Article
Experimental study of the delayed threshold phenomenon in a class-A VECSEL
1
Laboratoire Aimé-Cotton, CNRS-Université Paris Sud 11, 91405 Orsay Cedex, France
2
Institut de Physique de Rennes, UMR CNRS-Université de Rennes I 6251, 35042 Rennes Cedex, France
3
Laboratoire de Photonique et Nanostructures, CNRS, 91460 Marcoussis, France
a e-mail: abdelkrimelamili@gmail.com
Received:
21
February
2012
Revised:
13
March
2012
Accepted:
20
March
2012
Published online:
30
March
2012
An experimental study of the delayed threshold phenomenon in a Vertical Extended Cavity Semiconductor Emitting Laser is carried out. Under modulation of the pump power, the laser intensity exhibits a time delay in the vicinity of the threshold. The evolution of this delay is measured as a function of the modulation frequency and is proved to follow the predicted scaling law. A model based on the rate equations is derived and used to analyze the experimental observations. A frequency variation of the laser around the delayed threshold and induced by the phase-amplitude coupling is predicted and estimated.
© EDP Sciences, 2012
