Eur. Phys. J. Appl. Phys. (2013) 61: 30201
https://doi.org/10.1051/epjap/2013120489

Low-voltage organic complementary inverters fabricated with pentacene/SrTiO₃ and C₆₀/SrTiO₃ field-effect transistors

¹ College of Chemistry and Molecular Engineering, Zhengzhou University, 100 Kexue Road, Zhengzhou 450001, P.R. China
² Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, 4-4-37 Takeda, Kofu 400-8511, Japan

^a e-mail: yanhu@zzu.edu.cn
^b e-mail: okuzaki@yamanashi.ac.jp

Received: 26 October 2012
Revised: 25 December 2012
Accepted: 8 January 2013
Published online: 26 February 2013

Abstract

Organic complementary inverters were fabricated with low-voltage pentacene/SrTiO₃ and C₆₀/SrTiO₃ field-effect transistors (FETs), without formation of self-assembled monolayer on surface of the dielectric SrTiO₃. The inverters showed the highest gain of 18.4 at an operating voltage as low as 3 V, where the pentacene/SrTiO₃ and C₆₀/SrTiO₃ FETs on the inverters showed hole and electron mobilities of 0.85 and 0.07 cm²/V s with threshold voltages (V_T) of −1.1 and −0.2 V, respectively.