Eur. Phys. J. Appl. Phys. (2013) 62: 10301
https://doi.org/10.1051/epjap/2013120345

Analytical calculation of site and surface reaction probabilities of SiH_x radicals in PECVD process

Laboratoire LRPPS, Faculté des Sciences et de la Technologie et des Sciences de la Matière, Université Kasdi Merbah Ouargla, Ouargla 30000, Algeria

^a e-mail: fethi.khelfaoui@gmail.com; khelfaoui.fe@univ-ouargla.dz

Received: 29 August 2012
Accepted: 25 January 2013
Published online: 20 March 2013

Abstract

In this work we present a theoretical and mathematical relationship which calculates the site reaction probability (SRP) of the sticking on (Si-) dangling bonds (DB) or the SRP to abstract H from (Si-H) bonds, on the a-Si:H surface. The results are in agreement with those obtained by the Monte Carlo simulation. Using these probabilities allowed us to compute the surface reaction probability of SiH_x radicals on a-Si:H for several values of the temperature. The surface reaction probability (SFRP) results show also an excellent agreement with other works found in the literature.