https://doi.org/10.1051/epjap/2013130161
Properties of nano-crystalline silicon thin film fabricated by electron beam exposure
1
Department of Information Display and Advanced Display Research Center, Kyung Hee University, Dongdaemoon-ku, Seoul 130-701, Korea
2
Department of Optometry, Kangwon National University, Samcheok, Gangwondo 245-907, Korea
a e-mail: kyupark@khu.ac.kr
Received:
30
March
2013
Revised:
22
July
2013
Accepted:
24
July
2013
Published online:
27
August
2013
The crystallization of amorphous silicon thin films by electron beam exposure was studied. Amorphous silicon and silicon dioxide layers were deposited on glass substrate by PECVD at 360 °C. The optimization to crystallize 300 nm thick amorphous silicon film was carried out at a RF power of 300 W, DC voltage of 1500 V, Argon gas flow rate of 3 sccm and a distance between electron beam mesh and sample of 40 mm. High quality nano-crystalline silicon films with an activation energy of 0.47 eV from conductivity, a grain size of 15–45 nm from SEM and Raman crystalline volume fraction of 93.1% were fabricated. We expect that e-beam exposure will be applied to crystallization of amorphous silicon films.
© EDP Sciences, 2013
