https://doi.org/10.1051/epjap/2013130360
Light-induced degradation in p-type gallium co-doped solar grade multicrystalline silicon wafers and solar cells
1
School of Energy Research Xiamen University, 361005 Xiamen, P.R. China
2
College of Physics and Mechanics and Electrics Xiamen University, 361005 Xiamen, P.R. China
a e-mail: cchen@xmu.edu.cn
Received:
30
July
2013
Revised:
25
October
2013
Accepted:
13
November
2013
Published online:
16
December
2013
This letter focuses on the evolution under illumination of the minority carrier lifetime and conversion efficiency of p-type gallium (Ga) co-doped solar grade multicrystalline silicon wafers and solar cells. We present experimental data regarding the concentration of boron-oxygen (B-O) defects in this silicon when subjected to illumination, and the concentration was found to depend on [B]-[P] rather than [B] or the net doping p0([B] + [Ga] – [P]). This result implies that the compensated B is unable to form the B-O defect. Minority carrier lifetime and EQE measurements at different degradation states indicate that the B-O defect and Fe-acceptor pairs are the two key centers contributed to LID in this material.
© EDP Sciences, 2013
