https://doi.org/10.1051/epjap/2013130265
A compact model of subthreshold characteristics for short channel double-gate junctionless field effect transistors
1
School of Information Science and Engineering, Shenyang University of Technology, Shenyang
110870, P.R. China
2
School of Electronics Engineering, Kyungpook National University, 1370
Sangyuk-Dong Buk-Gu, Daegu
702-701, Korea
3
School of EECS Engineering and ISRC (Inter-University Semiconductor Research Center), Seoul National University, Shinlim-Dong, Kwanak-Gu, Seoul
151-742, Korea
a e-mail: xsjin@live.cn
Received:
3
June
2013
Revised:
6
August
2013
Accepted:
15
November
2013
Published online:
3
March
2014
A compact subthreshold characteristics model for short channel fully-depleted double-gate (DG) junctionless field effect transistors (JL FETs) which is based on an approximated solution of 2 dimensional Poisson’s equation has been proposed. The derivation details are introduced and the model’s accuracy has been verified by comparison with both previous models and the TCAD simulations’ results which proves that the subthreshold characteristics such as channel potential distribution, subthrethold drain-to-source current, subthreshold slope, drain-induced-barrier-lowering and threshold voltage can be accurately predicted by our proposed compact model.
© EDP Sciences, 2014
