https://doi.org/10.1051/epjap/2014130304
Resistive switching of Pt/ZrO2/YBa2Cu3O7 sandwiches
1
National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing
210093, P.R. China
2
College of Physics, Qingdao University, Qingdao
266071, P.R. China
a e-mail: diwu@nju.edu.cn
Received:
26
June
2013
Revised:
10
October
2013
Accepted:
28
January
2014
Published online:
3
March
2014
Resistive switching characteristics of Pt/ZrO2/YBa2Cu3O7 sandwiches are investigated for nonvolatile memory applications. Reproducible bipolar resistance switching with an on/off current ratio about 60 and long data retention are achieved. The conduction mechanism obeys Schottky emission in the low resistance state, while Poole-Frankel conduction is predominant in the high resistance state. The resistance switching of Pt/ZrO2/YBa2Cu3O7 sandwiches can be ascribed to migration and redistribution of oxygen vacancies around the ZrO2/YBa2Cu3O7 interface, which switches the conduction between the interface-controlled and the bulk-controlled mechanisms.
© EDP Sciences, 2014