https://doi.org/10.1051/epjap/2014130343
Interesting effects of the piezoelectric and internal electric fields on the band gap of InAs/GaAs/AlGaAs:δ-Si HEMTs
1
Laboratoire de Photovoltaïque, Centre de Recherche et des Technologies de l’énergie, BP 95, Hammam-Lif
2050, Tunisia
2
Laboratoire de Photonique et de Nanostructures, CNRS Route de Nozay, 91460
Marcoussis, France
a e-mail: mahmouddaoudi@ymail.com
Received:
23
July
2013
Revised:
16
January
2013
Accepted:
20
February
2014
Published online:
21
April
2014
The quantum confined Stark effect (QCSE) has been investigated in detail in GaAs/AlGaAs and InAs/GaAs/AlGaAs HEMTs structures grown by molecular beam epitaxy on (1 0 0) oriented GaAs substrates. A power dependent photoluminescence (PL) study allowed to highlight the QCSE caused by the internal electric field in the GaAs channel then a piezoelectric field reinforce the red-shift. Increasing the Si-δ-doping leads to; first a red-shift then a blue shift at high excitation power due to the stabilize quantum well structures tendency and the saturation phenomenon. The HEMT band structures and the theoretical activated electron densities at 10 K have been studied using the finite difference method and the simultaneously solve of the Schrödinger and the Poisson equations written within the Hartree approximation.
© EDP Sciences, 2014
