https://doi.org/10.1051/epjap/2015150032
A new drain current model for amorphous IGZO thin film transistors
School of Electronic and Information Engineering, South China University of Technology, Guangzhou
510640, P.R. China
a e-mail: phrhyao@scut.edu.cn
Received:
19
January
2015
Revised:
3
March
2015
Accepted:
19
March
2015
Published online:
21
April
2015
Based on the conduction mechanisms of amorphous InGaZnO (a-IGZO) thin film transistors, generalized equations are derived which permit the determination of drain current characteristics. A geometry-independent definition for field effect mobility considering the ratio of free-to-trapped carriers is introduced, which conveys the properties of the active semiconducting layer. It is suggested that a drain current model that includes different charge transports gives a consistent and accurate description of the electrical behavior. The good agreement between measured and calculated results confirms the efficiency of this model for the design of integrated large-area thin-film circuits.
© EDP Sciences, 2015
