Eur. Phys. J. Appl. Phys. (2015) 70: 30101
https://doi.org/10.1051/epjap/2015140522

Modeling of metal-ferroelectric-insulator-semiconductor structure considering the effects of interface traps

¹ College of Electrical & Information Engineering, Hunan Institute of Engineering, Xiangtan, 411104 Hunan, P.R. China
² School of Mechanical Engineering, Xiangtan University, 411105 Hunan, P.R. China

^a e-mail: jsun1206@163.com

Received: 31 December 2014
Revised: 7 April 2015
Accepted: 15 May 2015
Published online: 24 June 2015

Abstract

An improved model, in which the interface traps effects are considered, is developed by combining with quantum mechanical model, dipole switching theory and silicon physics of metal-oxide-semiconductor structure to describe the electrical properties of metal-ferroelectric-insulator-semiconductor (MFIS) structure. Using the model, the effects of the interface traps on the surface potential (ϕ_Si) of the semiconductor, the low frequency (LF) capacitance-voltage (C-V) characteristics and memory window of MFIS structure are simulated, and the results show that the ϕ_Si- V and LF C-V curves are shifted toward the positive-voltage direction and the memory window become worse as the density of the interface trap states increases. This paper is expected to provide some guidance to the design and performance improvement of MFIS structure devices. In addition, the improved model can be integrated into electronic design automation (EDA) software for circuit simulation.