Infrared backwards laser melting of a silicon wafer
Institut für Photovoltaik (ipv), Universität Stuttgart, Pfaffenwaldring 47, 70569
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Revised: 29 September 2015
Accepted: 5 October 2015
Published online: 3 November 2015
We investigate a method for melting a silicon wafer’s rear side with a pulsed infrared laser (1064 nm) impinging onto the front side. The targeted application for this method is deep laser doping. Our numerical model simulates the evolution of the two-dimensional temperature distribution in the wafer caused by pulsed infrared laser irradiation. The model incorporates the temperature dependent material properties of silicon and the enthalpy-based phase change by means of finite volumes. The simulation yields spacial temperature distributions of the wafer’s cross section at defined time steps. We obtain the laser parameters for a continuous melt depth of 40 µm in a 200 µm thick wafer from the analysis of the simulation results.
© The Author(s) 2015
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