https://doi.org/10.1051/epjap/2015150307
Nickel phthalocyanine based organic photo transistor: effect of semiconductor film thickness
1
GIK Institute of Engineering Sciences and Technology, 23460
Topi, KPK, Pakistan
2
Center for Innovative Development of Science and Technologies of Academy of Sciences, 734025
Dushanbe, Tajikistan
3
Muhammad Ali Jinnah University, 44000
Islamabad, Pakistan
4
Government College of Science, Wahdat Road, 54570
Lahore, Pakistan
5
Saint Cloud State University, 720 Fourth Avenue South, Saint Cloud, 56301-4498
MN, USA
6
Umm-ul-Qura University, P.O. Box 5555, 21955
Makkah, Saudi Arabia
a e-mail: msaleem108@hotmail.com; msaleem108@hotmail.com
Received:
16
June
2015
Revised:
31
August
2015
Accepted:
4
September
2015
Published online:
30
October
2015
Organic semiconducting photo transistors have been fabricated by depositing nickel phthalocyanine (NiPc) and semitransparent thin films of aluminum in sequence by vacuum evaporation on a glass substrate having silver source and drain electrodes. The thickness of NiPc film has been varied as 100 nm, 200 nm and 300 nm. The fabricated organic photo transistors (OPTs) having metal (aluminum)-semiconductor (NiPc) Schottky junction are then characterized and the effects of light irradiation on its characteristics have been investigated. It is observed that the drain current of OPTs rises with increasing radiation intensity and the OPTs having 200 nm thick NiPc film exhibited better performance as compared to the transistors having 100 nm and 300 nm thick films of NiPc.
© EDP Sciences, 2015
