https://doi.org/10.1051/epjap/2017170208
Regular Article
Effect of Schottky-ohmic separation length on the ac properties of planar Schottky barrier diode
Department of Electronic Science, University of Calcutta,
92, Acharyya Prafulla Chandra Road,
Kolkata
700009, India
* e-mail: pcelc@caluniv.ac.in
Received:
16
June
2017
Received in final form:
7
August
2017
Accepted:
14
September
2017
Published online: 27 October 2017
The effects of Schottky-ohmic separation length on the capacitance and ac resistance of Al-p-Si Schottky barrier diodes in planar configuration have been studied. It has been found that the capacitance of such devices depends upon the Schottky-ohmic separation length. While the variation of the capacitance with Schottky-ohmic separation length shows a decreasing trend at all measurement frequencies, the ac resistance of the device remains almost constant at high frequency though some nonlinearity with respect to Schottky-ohmic separation length has been noticed at lower frequencies. The dependence of the capacitance of the device with Schottky-ohmic separation length is analyzed and empirical relations are obtained by fitting the experimental data by linear trend lines.
© EDP Sciences, 2017
