Eur. Phys. J. Appl. Phys. 84, 20101 (2018)
https://doi.org/10.1051/epjap/2018180156

Regular Article

The influence of a strong infrared radiation field on the conductance properties of doped semiconductors

¹ Wigner Research Centre for Physics of the Hungarian Academy of Sciences, Konkoly − Thege Miklós út 29 - 33, H-1121 Budapest, Hungary
² ELI-HU Nonprofit Kft., Dugonics Tér 13, H-6720 Szeged, Hungary
³ University of Pécs, Ifjúság útja 6, H-7624, Pécs, Hungary

^* e-mail: barna.imre@wigner.mta.hu

Received: 22 May 2018
Received in final form: 17 October 2018
Accepted: 6 November 2018
Published online: 14 January 2019

Abstract

This work presents an analytic angular differential cross section formula for the electromagnetic radiation field-assisted electron scattering on impurities in semiconductors. These impurities are approximated with various model potentials. The scattered electrons are described with the well-known Volkov wave function, which has been used to describe strong laser field matter interaction for more than half a century, which exactly describes the interaction of the electron with the external oscillating field. These calculations show that the electron conductance in a semiconductor could be enhanced by an order of magnitude if an infrared electromagnetic field is present with 10¹¹ W/cm² < I < 10¹³ W/cm² intensity.